Effects of plasma and wet processes on Si-rich anti- reflective coating to address selective trilayer rework for sub-20nm techno
PDF) Conception and optimization of new architecture for high performance organic field effect transistors
The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre
Study of MOSFET Low Frequency Noise Source Fluctuation Using a New Fully Programmable Test Set‐up
PDF) New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node | M. Veillerot - Academia.edu
Polar Gaussian Processes for Predicting on Circular Domains
Contrôle technique CONTROLE TECHNIQUE DE CROLLES (CTC) - Dekra-Norisko.fr
Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics
Sample manuscript showing specifications and style
STMICROELECTRONICS (CROLLES 2) SAS (CROLLES) Chiffre d'affaires, résultat, bilans sur SOCIETE.COM - 399395581
Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin
Assessment and Characterization of Stress Induced by Via-First TSV Technology
Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Bas
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
STMICROELECTRONICS SA Crolles (Crolles, Auvergne-Rhône-Alpes)
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement | Scientific.Net
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development
STMicroelectronics - La French Fab
Crolles 1 et Crolles 2
Rue JEAN MONNET Crolles
Innovation Radar > Innovator > STMICROELECTRONICS CROLLES 2 SAS
Tensile-strained germanium microdisks with circular Bragg reflectors
Dual-polarization O-band silicon nitride Bragg filters with high extinction ration
